Title :
New mullite ceramic packages and substrates
Author :
Horiuchi, Michio ; Mizushima, Kihou ; Takeuchi, Yukiharu ; Wakabayashi, Shin-ichi
Author_Institution :
Shinko Electr. Ind. Co. Ltd., Nagano-city, Japan
Abstract :
Recent VLSI packaging technology requires high propagation speed, high wiring density and high thermal dissipation. In order to achieve these requirements, ceramic packages need to have a low thermal-expansion coefficient, a low dielectric constant, and a high thermal conductivity. For these purposes, new mullite ceramics have been developed. Their advantages and characteristics are as follows: (1) low dielectric constants (5.4 approximately 7.3 at 1 MHz), which are favorable for the high propagation speed; (2) low thermal expansion coefficients (3.0 approximately 4.5*10/sup -6// degrees C), which permit the direct attachment of a large silicon chip; (3) higher mechanical strength (20 approximately 31 kg/mm/sup 2/) than that for old mullite ceramics; (4) realization of tungsten metallization with a high adhesion strength by using Y/sub 2/O/sub 3/ as an additive; (5) low cost; and (6) ease of processing. The conventional alumina production process can be used for the new ceramic.<>
Keywords :
VLSI; ceramics; integrated circuit technology; packaging; substrates; thermal expansion; Al/sub 2/O/sub 3/-SiO/sub 2/; Si chip; VLSI; VLSI packaging technology; W metallisation; Y/sub 2/O/sub 3/ additive; adhesion strength; dielectric constant; mechanical strength; mullite ceramic packages; propagation speed; substrates; thermal conductivity; thermal dissipation; thermal-expansion coefficient; wiring density; Ceramics; Dielectric constant; Dielectric substrates; Packaging; Silicon; Thermal conductivity; Thermal expansion; Tungsten; Very large scale integration; Wiring;
Conference_Titel :
Electronics Components Conference, 1988., Proceedings of the 38th
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/ECC.1988.12651