DocumentCode :
2549004
Title :
A promising lead-free material for flip-chip bumps: Sn-Cu-RE
Author :
Wu, C. M Lawrence
Author_Institution :
Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, China
fYear :
2002
fDate :
14-16 Oct. 2002
Firstpage :
17
Lastpage :
26
Abstract :
In advanced electronic packaging, flip-chip (FC) bumps are required to be reliable and inexpensive. The Sn-0.7%Cu alloy has been considered as a lead-free material for FC bumps. Various small amounts of rare earth (RE) elements, which are mainly Ce and La, have been added to the Sn-0.7%Cu alloy to form new alloys. It was found that the new alloys exhibit mechanical properties superior to that of the Sn-0.7%Cu alloy. In particular, the addition of up to 0.5% of RE elements is found to refine the effective grain size and provide a fine and uniform distribution of Cu6Sn5 in the solidified microstructure. After aging at high temperature, the microstructure of Sn0.7%Cu-0.5%RE alloy is more stable than that of the Sn-0.7%Cu alloy. Tensile, creep and microhardness tests were, conducted on the solder alloys. It was found that significant improvements of the tensile strength and creep resistance were obtained with RE elements addition. These results have made the Sn-Cu-RE alloy to be very attractive as a suitable material for FC bumps.
Keywords :
alloying additions; cerium alloys; copper alloys; creep; creep testing; flip-chip devices; grain refinement; grain size; hardness testing; integrated circuit packaging; lanthanum alloys; microhardness; soldering; tensile strength; tensile testing; tin alloys; Ce; La; RE elements addition; Sn-Cu-RE; SnCuLaCe; aging; creep resistance; creep tests; effective grain size; electronic packaging; fine uniform distribution; flip-chip bumps; lead-free material; mechanical properties; microhardness tests; microstructure; rare earth elements; solder alloys; solidified microstructure; tensile strength; tensile tests; Aging; Creep; Electronics packaging; Environmentally friendly manufacturing techniques; Grain size; Lead; Mechanical factors; Microstructure; Temperature; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN :
0-7803-7276-X
Type :
conf
DOI :
10.1109/ASDAM.2002.1088465
Filename :
1088465
Link To Document :
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