DocumentCode :
2549116
Title :
Ti Zr dielectric layers deposited by hot target reactive magnetron sputtering
Author :
Domaradzki, J. ; Roci, E.I. ; Kaczmarek, D.
Author_Institution :
Fac. of Microsystem Electron. & Photonics, Wroclaw Univ. of Technol., Poland
fYear :
2002
fDate :
14-16 Oct. 2002
Firstpage :
47
Lastpage :
50
Abstract :
TiO2 - doped zirconium layers were deposited on silica substrate. It has been shown, that using a new hot target magnetron sputtering method it is possible to manufacture thin polycrystalline, dielectric films on amorphous substrate from metallic target even if post-deposition annealing was not done. Using X-Ray Diffraction (XRD) examinations crystalline phases of rutile were found both in as-deposited and in annealed samples. Scanning electron micrographs showed polycrystalline morphology with homogenous distribution of crystallites.
Keywords :
X-ray diffraction; dielectric thin films; scanning electron microscopy; sputter deposition; titanium compounds; zirconium compounds; SEM; SiO2; TiO2-ZrO2; XRD; amorphous substrate; dielectric films; hot target reactive magnetron sputtering; polycrystalline morphology; rutile; silica substrate; thin polycrystalline films; Amorphous magnetic materials; Amorphous materials; Annealing; Crystallization; Dielectric films; Dielectric substrates; Manufacturing; Silicon compounds; Sputtering; Zirconium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN :
0-7803-7276-X
Type :
conf
DOI :
10.1109/ASDAM.2002.1088471
Filename :
1088471
Link To Document :
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