DocumentCode
2549116
Title
Ti Zr dielectric layers deposited by hot target reactive magnetron sputtering
Author
Domaradzki, J. ; Roci, E.I. ; Kaczmarek, D.
Author_Institution
Fac. of Microsystem Electron. & Photonics, Wroclaw Univ. of Technol., Poland
fYear
2002
fDate
14-16 Oct. 2002
Firstpage
47
Lastpage
50
Abstract
TiO2 - doped zirconium layers were deposited on silica substrate. It has been shown, that using a new hot target magnetron sputtering method it is possible to manufacture thin polycrystalline, dielectric films on amorphous substrate from metallic target even if post-deposition annealing was not done. Using X-Ray Diffraction (XRD) examinations crystalline phases of rutile were found both in as-deposited and in annealed samples. Scanning electron micrographs showed polycrystalline morphology with homogenous distribution of crystallites.
Keywords
X-ray diffraction; dielectric thin films; scanning electron microscopy; sputter deposition; titanium compounds; zirconium compounds; SEM; SiO2; TiO2-ZrO2; XRD; amorphous substrate; dielectric films; hot target reactive magnetron sputtering; polycrystalline morphology; rutile; silica substrate; thin polycrystalline films; Amorphous magnetic materials; Amorphous materials; Annealing; Crystallization; Dielectric films; Dielectric substrates; Manufacturing; Silicon compounds; Sputtering; Zirconium;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN
0-7803-7276-X
Type
conf
DOI
10.1109/ASDAM.2002.1088471
Filename
1088471
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