• DocumentCode
    2549116
  • Title

    Ti Zr dielectric layers deposited by hot target reactive magnetron sputtering

  • Author

    Domaradzki, J. ; Roci, E.I. ; Kaczmarek, D.

  • Author_Institution
    Fac. of Microsystem Electron. & Photonics, Wroclaw Univ. of Technol., Poland
  • fYear
    2002
  • fDate
    14-16 Oct. 2002
  • Firstpage
    47
  • Lastpage
    50
  • Abstract
    TiO2 - doped zirconium layers were deposited on silica substrate. It has been shown, that using a new hot target magnetron sputtering method it is possible to manufacture thin polycrystalline, dielectric films on amorphous substrate from metallic target even if post-deposition annealing was not done. Using X-Ray Diffraction (XRD) examinations crystalline phases of rutile were found both in as-deposited and in annealed samples. Scanning electron micrographs showed polycrystalline morphology with homogenous distribution of crystallites.
  • Keywords
    X-ray diffraction; dielectric thin films; scanning electron microscopy; sputter deposition; titanium compounds; zirconium compounds; SEM; SiO2; TiO2-ZrO2; XRD; amorphous substrate; dielectric films; hot target reactive magnetron sputtering; polycrystalline morphology; rutile; silica substrate; thin polycrystalline films; Amorphous magnetic materials; Amorphous materials; Annealing; Crystallization; Dielectric films; Dielectric substrates; Manufacturing; Silicon compounds; Sputtering; Zirconium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
  • Print_ISBN
    0-7803-7276-X
  • Type

    conf

  • DOI
    10.1109/ASDAM.2002.1088471
  • Filename
    1088471