Title :
Charge properties of MIS structures Ni-DyxOy-n-Si [100]
Author :
Babushkina, Natalia V. ; Malyshev, Sergei A. ; Romanova, Lidia I. ; Chizh, Alexander L. ; Zhygulin, Dinitri V.
Author_Institution :
Inst. of Electron., Acad. of Sci., Minsk, Belarus
Abstract :
The study of the charge properties of DyxOy films with the high permittivity (ε∼10÷12) on the n-Si [100] is presented It is shown that suitable charge properties of the Ni-DyxOy-n-Si [100] structures are obtained under the Dy evaporation in Ar/O2 environment and following film oxidation in oxygen stream at the temperatures 360÷380°C. Based on the results obtained in this study it is concluded that the DyxOy films are good compatible gate dielectric material with the high permittivity for the silicon MIS structures.
Keywords :
MIS structures; dielectric thin films; dysprosium compounds; elemental semiconductors; nickel; silicon; 360 to 380 degC; Ar-O2; Ar/O2 environment; Dy evaporation; MIS structures; Ni-DyxOy-Si; Ni-DyxOy-n-Si[100]; Si; charge properties; film oxidation; gate dielectric material; high permittivity films; Capacitance-voltage characteristics; Chemicals; Dielectric losses; MISFETs; Oxidation; Permittivity; Semiconductor films; Silicon; Temperature; Tunneling;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN :
0-7803-7276-X
DOI :
10.1109/ASDAM.2002.1088477
