• DocumentCode
    2549266
  • Title

    Design of strain gauge structure

  • Author

    Husak, M. ; Kulha, P. ; Jakovenko, J. ; Výborný, Z.

  • Author_Institution
    Dept. of Microelectron., Czech Tech. Univ., Prague, Czech Republic
  • fYear
    2002
  • fDate
    14-16 Oct. 2002
  • Firstpage
    75
  • Lastpage
    78
  • Abstract
    The paper describes the design of a strain gauge on a cantilever with implanted layers. In the paper, the physical model of implanted strain gauges is characterized and basic technological steps are described. Simulation using CoventorWare (MEMCAD) program is used to verify the mechanical properties and temperature distribution in cantilever structures. A suitable electric bridge connection of the structure for evaluation of electric parameters of strain gauges at mechanic deformation and different temperatures has been designed. On realized structures, basic parameters have been measured such as the dependence of electric parameters of strain gauges on mechanical deformation, temperature dependence at different mechanical load, temperature stability of output parameters, and temperature dependence of pn junctions in the structure. From the measured data, piezoresistive coefficients of deformation sensitivity, linearity, hysteresis, temperature coefficients of resistance, etc. have been calculated. The measured characteristics show very good linearity, small hysteresis and very good sensitivity.
  • Keywords
    CAD; deformation; digital simulation; strain gauges; thermal stability; CoventorWare MEMCAD program simulation; electric bridge connection; electric parameters; implanted layer cantilever; mechanical deformation; mechanical load; mechanical properties; physical model; piezoresistive coefficients; pn junctions; sensitivity; strain gauge structure design; temperature dependence; temperature distribution; temperature stability; Capacitive sensors; Electrical resistance measurement; Hysteresis; Linearity; Mechanical factors; Paper technology; Strain measurement; Temperature dependence; Temperature distribution; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
  • Print_ISBN
    0-7803-7276-X
  • Type

    conf

  • DOI
    10.1109/ASDAM.2002.1088479
  • Filename
    1088479