Title :
Thermal resistance of the semiconductor structures for a photomixing device
Author :
Darmo, J. ; Schafer, F. ; Förster, A. ; Kordo, P. ; Güsten, R.
Author_Institution :
Max-Planck-Inst. fur Radioastronomie, Bonn, Germany
Abstract :
The thermal resistance of layered semiconductor systems intended to be used for GaAs-based photomixing devices is studied. Layered systems with nonstoichiometric GaAs on the substrate exhibit an increase of thermal resistance of about 33%, while using a thin AlAs/GaAs multilayer structure leads to a thermal resistance only 10% larger than the thermal resistance of the GaAs substrate. The results are discussed with respect to the heat dissipation and implications for the photomixer device.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical frequency conversion; photoconducting devices; thermal resistance; AlAs-GaAs; AlAs/GaAs multilayer structure; GaAs; GaAs-based photomixing devices; heat dissipation; nonstoichiometric GaAs; photomixing device; semiconductor structures; thermal resistance; Electrical resistance measurement; Frequency conversion; Gallium arsenide; Laser tuning; Optical frequency conversion; Optical mixing; Silicon; Substrates; Thermal conductivity; Thermal resistance;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN :
0-7803-7276-X
DOI :
10.1109/ASDAM.2002.1088482
