DocumentCode
2549341
Title
Interactions between phases and thermal stability of TiBx(ZrBx)-n-SiC 6H contacts
Author
Boltovets, N.S. ; Ivanov, V.N. ; Abdizhaliev, S.K. ; Konakova, R.V. ; Kudrik, Ya.Ya. ; Lytvyn, P.M. ; Lytvyn, O.S. ; Milenin, V.V. ; Rengevych, O.E. ; Venger, E.F. ; Vlaskina, S.I.
Author_Institution
Sci. & Res. Inst. "Orion", Kiev, Ukraine
fYear
2002
fDate
14-16 Oct. 2002
Firstpage
95
Lastpage
98
Abstract
We present the results of our investigations of morphological and electrical characteristics of TiBx(ZrBx)-n-SiC 6H (0001) surface-barrier structures. They were studied both before and after rapid thermal annealing (RTA) in vacuum at 1000°C for 90 s. The TiBx (ZrBx) films were obtained using magnetron sputtering from pressed targets of stoichiometric composition. It was shown that RTA changed neither the contact layered structure nor the abrupt shape of the interface, and the contact barrier properties were retained.
Keywords
Schottky barriers; contact resistance; interface structure; rapid thermal annealing; silicon compounds; sputtered coatings; stoichiometry; thermal stability; titanium compounds; wide band gap semiconductors; zirconium compounds; 1000 degC; 90 s; RTA; SiC; TiBx(ZrBx)-n-SiC 6H contacts; TiBx-SiC; ZrBx-SiC; contact barrier properties; contact structure; electrical characteristics; interface; magnetron sputtering; morphological characteristics; phases; rapid thermal annealing; surface-barrier structures; thermal stability; vacuum; Atomic force microscopy; Electrons; Gold; Nickel; Schottky barriers; Schottky diodes; Silicon carbide; Temperature; Testing; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN
0-7803-7276-X
Type
conf
DOI
10.1109/ASDAM.2002.1088484
Filename
1088484
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