Title :
Numerical simulation of parameters of ZnCdHgTe films and ZnCdHgTe-based heterostructures
Author :
Khlyap, G. ; Sydorchuk, P.
Author_Institution :
Drogobych State Pedagogical Univ., Ukraine
Abstract :
Two simple calculation techniques are proposed for numerical modeling and estimation of the main parameters determining the operational reliability of active elements based on A2B6 materials. In particular, room-temperature processes of charge carrier transport accounting for inhomogeneities of epitaxial film surfaces and the work function of the heterostructures based on the narrow-gap solid solution ZnCdHgTe are reported. The calculation algorithm is also presented.
Keywords :
II-VI semiconductors; cadmium compounds; electrical conductivity; mercury compounds; narrow band gap semiconductors; semiconductor epitaxial layers; semiconductor heterojunctions; work function; zinc compounds; 20 C; A2B6 materials; ZnCdHgTe; ZnCdHgTe films; ZnCdHgTe-based heterostructures; active elements; calculation algorithm; charge carriers transport; epitaxial films surfaces; inhomogeneities; narrow-gap solid solution; numerical modeling; numerical simulation; operation reliability; room-temperature processes; work function; Current measurement; Dielectric constant; Electrons; Electrooptic effects; Lattices; Modems; Numerical simulation; Optical films; Photonic band gap; Variable speed drives;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN :
0-7803-7276-X
DOI :
10.1109/ASDAM.2002.1088485
