DocumentCode :
2549372
Title :
Raman spectroscopy of SixGe1-x compositional and temperature dependence
Author :
Lorenc, M. ; Sik, J.
Author_Institution :
TEROSIL, a.s., Roznov Pod Radhostem, Czech Republic
fYear :
2002
fDate :
14-16 Oct. 2002
Firstpage :
103
Lastpage :
106
Abstract :
Raman spectroscopy is employed to study the compositional and temperature dependence of optical phonon modes in SixGe1-x(0.0037≤.×≤1) alloy. Czochralski grown samples are doped in the range from nominally undoped to heavily boron doped, with the highest concentration of free holes of 1020 cm-3. Three observed bands can be attributed to local Si-Si, Ge-Ge and Si-Ge vibrational modes. We present compositional dependence and temperature shift of the Si-Si band.
Keywords :
Ge-Si alloys; Raman spectra; boron; heavily doped semiconductors; hole density; localised modes; phonon spectra; semiconductor materials; stoichiometry; GeSi:B; Raman spectroscopy; SixGe1-x; compositional dependence; free holes; heavily boron doped Si-Ge; local Ge-Ge modes; local Si-Ge modes; local Si-Si modes; optical phonon modes; temperature dependence; vibrational modes; Boron; Crystalline materials; Crystals; Lattices; Optical scattering; Photonic band gap; Photovoltaic cells; Raman scattering; Solar power generation; Spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN :
0-7803-7276-X
Type :
conf
DOI :
10.1109/ASDAM.2002.1088486
Filename :
1088486
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2549372
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