• DocumentCode
    2549372
  • Title

    Raman spectroscopy of SixGe1-x compositional and temperature dependence

  • Author

    Lorenc, M. ; Sik, J.

  • Author_Institution
    TEROSIL, a.s., Roznov Pod Radhostem, Czech Republic
  • fYear
    2002
  • fDate
    14-16 Oct. 2002
  • Firstpage
    103
  • Lastpage
    106
  • Abstract
    Raman spectroscopy is employed to study the compositional and temperature dependence of optical phonon modes in SixGe1-x(0.0037≤.×≤1) alloy. Czochralski grown samples are doped in the range from nominally undoped to heavily boron doped, with the highest concentration of free holes of 1020 cm-3. Three observed bands can be attributed to local Si-Si, Ge-Ge and Si-Ge vibrational modes. We present compositional dependence and temperature shift of the Si-Si band.
  • Keywords
    Ge-Si alloys; Raman spectra; boron; heavily doped semiconductors; hole density; localised modes; phonon spectra; semiconductor materials; stoichiometry; GeSi:B; Raman spectroscopy; SixGe1-x; compositional dependence; free holes; heavily boron doped Si-Ge; local Ge-Ge modes; local Si-Ge modes; local Si-Si modes; optical phonon modes; temperature dependence; vibrational modes; Boron; Crystalline materials; Crystals; Lattices; Optical scattering; Photonic band gap; Photovoltaic cells; Raman scattering; Solar power generation; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
  • Print_ISBN
    0-7803-7276-X
  • Type

    conf

  • DOI
    10.1109/ASDAM.2002.1088486
  • Filename
    1088486
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2549372