DocumentCode
2549410
Title
Some possibilities for determining the depth of the p-n junction and profiles of semiconductor layers
Author
Hulenyi, L. ; Kinder, R.
Author_Institution
Fac. of Electr. Eng. & Inf. Technol., Slovak Univ. of Technol., Bratislava, Slovakia
fYear
2002
fDate
14-16 Oct. 2002
Firstpage
111
Lastpage
114
Abstract
Electrochemical capacitance-voltage (ECV) techniques and the four-point probe method have been used to determine the carrier profile N(x) and the depth of the p+-n junction of a boron implanted silicon wafer. It was found that the p+-n junction depth can provide reliable information only if certain limitations are considered in detail. The results obtained by ECV were compared with those computed by SUPREM.
Keywords
boron; capacitance; carrier density; doping profiles; electrical conductivity; electrochemical analysis; elemental semiconductors; interface structure; p-n junctions; silicon; ECV; SUPREM calculation; Si:B; boron implanted silicon wafer; carrier profile; depth; electrochemical capacitance-voltage techniques; four-point probe method; junction depth; p-n junction; p+-n junction; profiles; semiconductor layers; Boron; Capacitance; Contacts; Electrical resistance measurement; Integrated circuit reliability; P-n junctions; Probes; Silicon; Strontium; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN
0-7803-7276-X
Type
conf
DOI
10.1109/ASDAM.2002.1088488
Filename
1088488
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