Terahertz Bloch oscillations in semiconductor superlattices

Author

Moravcova, Helena ; Voves, Jan

Author_Institution

Dept. of Microelectron., Czech Tech. Univ., Prague, Czech Republic

fYear

2002

fDate

14-16 Oct. 2002

Firstpage

133

Lastpage

135

Abstract

Bloch Oscillations (BO) in AlGaAs/GaAs superlattices were studied by Monte Carlo method. A two-dimensional model based on the effective mass approximation was used for studying electron miniband transport. Scattering on polar optical and acoustic phonons as well as impurities were taken into account. Behavior of BO was studied under different conditions such as intensity of electric field temperature and concentration of ionised impurities.

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; effective mass; electron-phonon interactions; gallium arsenide; impurity scattering; semiconductor superlattices; 2D model; AlGaAs-GaAs; Bloch oscillation; Monte Carlo method; acoustic phonon scattering; effective mass approximation; electron miniband transport; impurity scattering; ionised impurities; polar optical phonon scattering; semiconductor superlattices; Acoustic scattering; Effective mass; Electron optics; Gallium arsenide; Optical scattering; Optical superlattices; Phonons; Semiconductor impurities; Semiconductor superlattices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Print_ISBN

0-7803-7276-X

Type

conf

DOI

10.1109/ASDAM.2002.1088492

Filename

1088492