Title :
Investigation of 4H-SiC diode with RuO2 Schottky contact by DLTS
Author :
Stuchliková, E. ; Harmatha, L. ; Buc, D. ; Helmersson, U. ; Wahab, Q.
Author_Institution :
Dept. of Microelectron., Slovak Univ. of Technol., Bratislava, Slovakia
Abstract :
Deep level transient spectroscopy measurements were performed on silicon carbide (4H-SiC) Schottky diodes with RuO2 Schottky contacts in order to investigate electrical properties of a new type of Schottky diode. Two electron deep energy levels were detected on this Schottky diode. Their thermal activation energies are 0.56 eV and 0.85 eV, respectively, referred to the conductance band. The origin of these deep levels is still under investigation.
Keywords :
Schottky diodes; deep level transient spectroscopy; deep levels; ruthenium compounds; semiconductor device measurement; silicon compounds; wide band gap semiconductors; 4H-SiC diode; DLTS; RuO2; RuO2 Schottky contact; Schottky diodes; SiC; deep level transient spectroscopy; electron deep energy levels; thermal activation energy; Capacitance; Physics; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Spectroscopy; Substrates; Temperature; Voltage;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN :
0-7803-7276-X
DOI :
10.1109/ASDAM.2002.1088497
