Title :
Characterization of delta-doped GaAs grown by MOVPE
Author :
Gurnik, P. ; Beno, Peter ; Srnanek, R. ; Tlaczala, M. ; Sciana, B. ; Harmatha, L.
Author_Institution :
Dept. of Microelectron., Slovak Univ. of Technol., Bratislava, Slovakia
Abstract :
The resolution of the capacitance-voltage (C-V) technique on single- and double-delta (δ)-doped GaAs is shown to be given by the breadth of dopant distribution. The experimental C-V profiles demonstrate that impurities are spatially localized on the length scale of the lattice constant. The sharp distribution of dopants is assessed by the secondary-ion mass spectroscopy.
Keywords :
III-V semiconductors; MOCVD coatings; capacitance; doping profiles; gallium arsenide; secondary ion mass spectra; semiconductor epitaxial layers; C-V profile; GaAs; MOVPE; capacitance-voltage; delta-doped GaAs; dopant distribution; lattice constant; secondary-ion mass spectroscopy; Atomic layer deposition; Capacitance; Doping profiles; Epitaxial growth; Epitaxial layers; Gallium arsenide; Motorcycles; Semiconductor devices; Semiconductor materials; Substrates;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN :
0-7803-7276-X
DOI :
10.1109/ASDAM.2002.1088498
