DocumentCode :
2549606
Title :
Vertically integrated CMOS active pixel sensors for tracking applications in HEP experiments
Author :
Passeri, D. ; Servoli, L. ; Meroli, S. ; Magalotti, D. ; Placidi, P.
Author_Institution :
D.I.E.I., Univ. di Perugia, Perugia, Italy
fYear :
2012
fDate :
Oct. 27 2012-Nov. 3 2012
Firstpage :
1330
Lastpage :
1333
Abstract :
In this work we propose an innovative approach to particle tracking based on CMOS Active Pixel Sensors layers, monolithically integrated in an all-in-one chip featuring multiple, stacked, fully functional detector layers capable to provide momentum measurements (particle impact point and direction) within a single detector. This will results in a very low material detector, thus dramatically reducing multiple scattering issues. A first chip prototype has been fabricated within a multi-project run using a 130nm CMOS 3D Chartered/Tezzaron technology, featuring two layers bonded face-to-face. Tests have been carried out on full 3D structures, providing the functionalities of both tiers and their inter-communications. Actually, laser scans have been carried out using highly focussed spot size, obtaining coincidence responses of the two layers. X-rays sources have been used as well for sensor calibration purposes. Beam tests with 3MeV protons have been carried out at the INFN LABEC laboratories in Florence (Italy) to assess the suitability of the proposed approach for Minimum Ionizing Particle detection.
Keywords :
CMOS integrated circuits; calibration; semiconductor counters; CMOS 3D Chartered/Tezzaron technology; Florence; INFN LABEC laboratories; Italy; REP experiments; X-ray sources; all-in-one chip; beam tests; chip prototype; highly focussed spot size; laser scans; low material detector; minimum ionizing particle detection; momentum measurements; multiple scattering issues; multiple stacked fully functional detector layers; multiproject run; particle impact direction; particle impact point; particle tracking; sensor calibration; tracking applications; vertically integrated CMOS active pixel sensor layers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012 IEEE
Conference_Location :
Anaheim, CA
ISSN :
1082-3654
Print_ISBN :
978-1-4673-2028-3
Type :
conf
DOI :
10.1109/NSSMIC.2012.6551325
Filename :
6551325
Link To Document :
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