MOVPE growth of 1220 nm (In,Ga)(As,P)/InP LED structures

In_1-xGa_xAs_1-yP_y/InP layers and LED structures were prepared for the wavelength 1220 nm by LP MOVPE. Very high phosphine/arsine ratio (>100) was necessary to achieve desirable quaternary composition at the growth temperature of 650°C. Very good surface morphology with the height of the growth steps of one monolayer was measured by AFM on the lattice matched layers. Significant shift of the photoluminescence spectra from p-type layers, contrary to n-type or undoped layers, was measured at 5 K. The electroluminescent spectrum from a quaternary LED measured at 300 K with a maximum at 1224.6 nm is shown.