Title :
Modeling of the inverse base width modulation effect in SiGe base HBT for circuit simulation
Author :
Pesic, Tatjalia ; Jankovic, Nebojsa ; Karamarkovic, Jugoslav
Author_Institution :
Dept. of Microelectron., Nis Univ., Serbia
Abstract :
We describe the method of including the inverse base width modulation (IBWM) effect in the non-quasi static SiGe base HBT circuit model. Simulated results reveal that the IBWM effect has strong influence on the HBT electrical characteristics and must be taken into account for accurate modeling of SiGe HBTs.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; HBT electrical characteristics; IBWM effect; SiGe; SiGe HBTs; SiGe base HBT; circuit simulation; inverse base width modulation effect; modeling; nonquasi static SiGe base HBT circuit model; Circuit simulation; Germanium silicon alloys; Heterojunction bipolar transistors; Inverse problems; Silicon germanium; Switches; Switching circuits; Voltage control;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN :
0-7803-7276-X
DOI :
10.1109/ASDAM.2002.1088503
