Title :
Evaluation of δ-layer depth profiles detected on beveled semiconductor structures by micro Raman spectroscopy
Author :
Rheinländer, B. ; Srnanek, R. ; Kovac, J.
Author_Institution :
Dept. of Semicond., Leipzig Univ., Germany
Abstract :
The theoretical evaluation of the Raman intensities ratio of LO and TO phonons along the beveled GaAs structure containing Si δ-doped layer was performed. Excellent agreement with measured spectra was obtained.
Keywords :
III-V semiconductors; Raman spectra; doping profiles; gallium arsenide; phonons; spectral line intensity; GaAs; LO phonons; Raman intensities ratio; TO phonons; beveled semiconductor structures; delta layer depth profiles; micro Raman spectroscopy; Absorption; Atom optics; Atomic beams; Atomic layer deposition; Gallium arsenide; Laser excitation; Laser modes; Microscopy; Raman scattering; Spectroscopy;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN :
0-7803-7276-X
DOI :
10.1109/ASDAM.2002.1088506
