Title :
Large grain thin film polycrystalline silicon solar cells using zone melting recrystallization
Author :
Deguchi, M. ; Morikawa, H. ; Itagaki, T. ; Ishihara, T. ; Namizaki, H.
Author_Institution :
Mitsubishi Electr. Corp., Tokyo, Japan
Abstract :
Large-grain polycrystalline silicon thin films have been successfully obtained using the zone melting recrystallization (ZMR) technique. The grain size extended from the order of millimeters to centimeters along the scanning direction without seeding. Film thickness was 30 μm. Solar cells fabricated using these films showed efficiency of several percent. EBIC measurement revealed that the recrystallized film contained many defects which limited the efficiency
Keywords :
EBIC; elemental semiconductors; grain size; semiconductor growth; semiconductor thin films; silicon; solar cells; zone melting; 30 micron; EBIC measurement; Si; grain size; large grain thin film; polycrystalline silicon solar cells; zone melting recrystallization; Costs; Crystallization; Grain size; Heating; Lamps; Photovoltaic cells; Semiconductor films; Semiconductor thin films; Silicon on insulator technology; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169357
