DocumentCode :
2549896
Title :
Heat transfer modeling in metal-semiconductor structures
Author :
Khlyap, G. ; Sydorchuk, P.
Author_Institution :
Dept. of Phys., State Pedagogical Univ., Drogobych, Ukraine
fYear :
2002
fDate :
14-16 Oct. 2002
Firstpage :
219
Lastpage :
222
Abstract :
The paper reports on the first results of heat transfer modeling performed for metal-semiconductor structures based on A2B6 compounds. Current-voltage dependences were studied and numerically simulated in order to clarify the effect of thermal generation from the metallic contacts regions observed under electric field application. It is shown that one of principal parameters of the current-voltage dependence (determining the mode of operation of an active device), namely the non-ideality factor, is strongly influenced by the heat flowing through the contact regions.
Keywords :
II-VI semiconductors; heat transfer; semiconductor-metal boundaries; zinc compounds; A2B6 compounds; In-ZnTe-ZnHgTe; current-voltage dependence; heat transfer modeling; metal-semiconductor structures; metallic contact region; nonideality factor; numerical simulation; Composite materials; Epitaxial growth; Heat transfer; Manufacturing; Numerical simulation; Solids; Substrates; Temperature; Voltage; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN :
0-7803-7276-X
Type :
conf
DOI :
10.1109/ASDAM.2002.1088511
Filename :
1088511
Link To Document :
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