Title :
A tunable floating gate CMOS resistor for low-power and low-voltage applications
Author :
Özalevli, Erhan ; Hasler, Paul E.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
This paper describes an implementation of a tunable CMOS resistor that can be fully integrated in a standard CMOS technology with low-power and low-voltage applications. It is built by exploiting the capacitive coupling and voltage storage capabilities of a floating-gate transistor. Also, a scaled-gate linearization technique is utilized to suppress the transistor nonlinearities in the triode region. The resistance of the proposed circuit is tuned by utilizing Fowler-Nordheim tunnelling and hot-electron injection quantum mechanical phenomena. We present experimental data from the chip that was fabricated in 0.5mum CMOS process, and show that this resistor exhibits total harmonic distortion (THD) better than 7-bit linearity for 1KHz 1Vpp sinusoidal input
Keywords :
CMOS integrated circuits; circuit tuning; harmonic distortion; linearisation techniques; low-power electronics; resistors; 0.5 micron; 1 V; 1 kHz; Fowler-Nordheim tunnelling; capacitive coupling; floating-gate transistor; hot-electron injection; quantum mechanical phenomena; scaled-gate linearization; total harmonic distortion; transistor nonlinearities; tunable CMOS resistor; voltage storage capabilities; CMOS technology; Coupling circuits; Integrated circuit technology; Linearization techniques; Resistors; Secondary generated hot electron injection; Tunable circuits and devices; Tuned circuits; Tunneling; Voltage;
Conference_Titel :
Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on
Conference_Location :
Island of Kos
Print_ISBN :
0-7803-9389-9
DOI :
10.1109/ISCAS.2006.1693573
