Title :
Profiling of a GaAs structure using the probe method
Author :
Kinder, R. ; Srnánek, R. ; Walachová, J. ; Hulényi, L. ; Tlaczala, M. ; Sciana, R. ; Radziewicz, D.
Author_Institution :
Fac. of Electr. Eng., Slovak Univ. of Technol., Bratislava, Slovakia
Abstract :
Determination of doping concentration profiles of GaAs on a bevelled surface by the probe method is presented. The bevelled structures were prepared by chemical etching. The results are compared with electrochemical capacitance-voltage technique. Some specific problems are discussed.
Keywords :
III-V semiconductors; carrier density; doping profiles; etching; gallium arsenide; silicon; GaAs; bevelled surface; chemical etching; doping concentration profiles; electrochemical capacitance-voltage technique; Buffer layers; Chemical vapor deposition; Doping profiles; Electronic mail; Etching; Gallium arsenide; Probes; Spectroscopy; Strontium; Voltage;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN :
0-7803-7276-X
DOI :
10.1109/ASDAM.2002.1088514
