RF small-signal and power characterization of AlGaN/GaN HEMTs

Author

Fox, A. ; Marso, M. ; Javorka, P. ; Kordo, P.

Author_Institution

Inst. of Thin Films & Interfaces, Res. Centre Julich, Germany

fYear

2002

fDate

14-16 Oct. 2002

Firstpage

291

Lastpage

294

Abstract

S-parameter and load pull measurements are used to characterize the properties of AlGaN/GaN HEMTs grown on sapphire or silicon substrates. From the small signal data it follows that the cut-off frequencies f_T and f_max increase with the number of fingers, i.e. with the gate width, because of reduced contribution of parasitics to the total gate capacitance. Load-pull measurement setup is described and results of the output power, gain and PAE at 7 GHz are shown.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; power HEMT; wide band gap semiconductors; 7 GHz; Al₂O₃; AlGaN-GaN; AlGaN/GaN HEMTs; PAE; RF small-signal characterization; S-parameter; Si; cut-off frequencies; gain; gate width; load pull measurements; output power; parasitics; power characterization; properties; sapphire substrates; silicon substrates; total gate capacitance; Aluminum gallium nitride; Cutoff frequency; Fingers; Gallium nitride; HEMTs; MODFETs; Parasitic capacitance; Radio frequency; Scattering parameters; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Print_ISBN

0-7803-7276-X

Type

conf

DOI

10.1109/ASDAM.2002.1088527

Filename

1088527