High-performance low-power CMOS circuits using multiple channel length and multiple oxide thickness

Power optimization has become an important issue for high performance designs. One way to achieve low-power and high performance circuits is to use dual-threshold voltages. High threshold transistors can be used in non-critical paths to reduce the leakage power, while lower threshold voltage is used for transistors in critical path(s) to achieve high performance. This paper proposes two low power and high performance CMOS design techniques-multiple channel length (M_LCMOS) and multiple oxide thickness (M_oxCMOS), based on dual V_th, design technique. A comprehensive algorithm for selecting and assigning optimal transistor threshold voltage, channel length and oxide thickness is given. The simulation results on ISCAS benchmark circuits show that the total power consumption can be reduced by 21% for M_LCMOS at low activity. Total power savings for M_oxCMOS at low and high switching activities are about 42% and 24%, respectively