DocumentCode :
2550466
Title :
New trends in thin-film silicon solar cell technology
Author :
Zeman, Miro
Author_Institution :
DIMES, Delft Univ. of Technol., Netherlands
fYear :
2002
fDate :
14-16 Oct. 2002
Firstpage :
353
Lastpage :
362
Abstract :
Thin-film silicon solar cell technology based on hydrogenated amorphous silicon has matured over the last two decades and is capable of delivering commercial modules with almost 10% stabilized efficiency. The status of thin-film silicon cell technology is reviewed by comparing it to other major solar cell technologies. The basic operation principles and the shortcomings of a-Si:H solar cells are outlined. The multi-junction and multi-band gap approach for obtaining highly efficient a-Si:H based solar cells is introduced. Application of novel materials, such as hydrogenated microcrystalline silicon and protocrystalline silicon, and efficient light trapping techniques in the multi-junction solar structures is highlighted. A novel temporary superstrate concept for a low-cost roll-to-roll production of thin-film silicon solar cells that has been developed in the Netherlands is presented.
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; modules; reviews; semiconductor device manufacture; semiconductor thin films; silicon; solar cell arrays; solar cells; 10 percent; Si:H; a-Si:H based solar cells; commercial modules; hydrogenated amorphous silicon; hydrogenated microcrystalline silicon; light trapping; low-cost roll-to-roll production; multi-band gap; multi-junction; multi-junction solar structures; operation principles; protocrystalline silicon; review; stabilized efficiency; temporary superstrate concept; thin-film silicon solar cell technology; Ambient intelligence; Chemical vapor deposition; Costs; Glass; Photovoltaic cells; Production; Semiconductor thin films; Silicon; Solar power generation; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN :
0-7803-7276-X
Type :
conf
DOI :
10.1109/ASDAM.2002.1088542
Filename :
1088542
Link To Document :
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