Titanium- and molybdenum-related levels in EFG silicon

Author

Borenstein, J.T. ; Bathey, B.R. ; Kalejs, J.P. ; Hanoka, J.I. ; Pearce, N.O.

Author_Institution

Mobil Solar Energy Corp., Billerica, MA, USA

fYear

1991

fDate

7-11 Oct 1991

Firstpage

1006

Abstract

The behavior of titanium and molybdenum in edge-defined film-fed grown (EFG) silicon has been investigated using deep-level transient spectroscopy (DLTS). These impurities were intentionally introduced at high concentrations into the silicon melt during EFG growth. Infrared photoconductivity (IRPC) measurements made on the processed material revealed sharply reduced base diffusion lengths. Subsequent DLTS measurements revealed trap levels in the EFG material similar to those previously reported for these elements in single-crystal silicon. In spite of the proximity of the Ti and Mo hole-trapping levels to each other, their activation energies could be distinguished

Keywords

crystal growth from melt; deep level transient spectroscopy; deep levels; elemental semiconductors; impurities; molybdenum; photoconductivity; semiconductor growth; silicon; titanium; EFG silicon; IR photoconductivity measurements; Si:Mo; Si:Ti; activation energies; deep-level transient spectroscopy; edge-defined film-fed growth; hole-trapping levels; impurities; Crystallization; Energy measurement; Energy states; Impurities; Length measurement; Photoconducting materials; Photovoltaic cells; Silicon; Spectroscopy; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE

Conference_Location

Las Vegas, NV

Print_ISBN

0-87942-636-5

Type

conf

DOI

10.1109/PVSC.1991.169361

Filename

169361