DocumentCode
255084
Title
Enhancing lifetime of NVM-based main memory with bit shifting and flipping
Author
Xianlu Luo ; Duo Liu ; Kan Zhong ; Dan Zhang ; Yi Lin ; Jie Dai ; Weichen Liu
Author_Institution
Coll. of Comput. Sci., Chongqing Univ., Chongqing, China
fYear
2014
fDate
20-22 Aug. 2014
Firstpage
1
Lastpage
7
Abstract
Non-volatile memory (NVM) is considered as the most promising candidate of main memory due to many attractive properties, such as shock-resistivity, non-volatility, high density and near zero leakage power. However, the write endurance and high write energy consumption greatly limit its adoption in modern memory systems. In this paper, we propose a write reduction technique, called Min-Shift, to reduce the total number of writes to NVM. The basic idea is to re-encode the data to be written via bit shifting and flipping. This is motivated by the fact that NVM write operation takes more latency than read, and the energy cost of the value to be written varies a lot. The effectiveness of Min-Shift is verified by mathematical analysis and experiment. Experimental results show that the proposed technique can reduce the number of writes by 57.3% on average. The lifetime of NVM is 2.3× longer than before.
Keywords
mathematical analysis; random-access storage; Min-Shift; NVM-based main memory; bit shifting; flipping; high write energy consumption; mathematical analysis; memory systems; near zero leakage power; nonvolatile memory; shock-resistivity; write endurance; write reduction technique; Energy consumption; Hamming distance; Measurement; Nonvolatile memory; Phase change materials; Random access memory; Non-volatile memory; bit shifting; lifetime;
fLanguage
English
Publisher
ieee
Conference_Titel
Embedded and Real-Time Computing Systems and Applications (RTCSA), 2014 IEEE 20th International Conference on
Conference_Location
Chongqing
Type
conf
DOI
10.1109/RTCSA.2014.6910554
Filename
6910554
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