Title :
The application of silicon dioxide as an electret material
Author :
Sprenkels, A.J. ; Olthuis, W. ; Berveld, P.
Author_Institution :
Twente Univ., Enschede, Netherlands
Abstract :
The authors have investigated silicon dioxide for its electret properties. It appears that thermally grown silicon dioxide has a large lateral surface conductivity, resulting in poor electret behavior. This can be adequately reduced by chemical surface modification, resulting in an excellent silicon dioxide electret. Experiments have shown that corona-charged SiO2 layers are much more resistant to high temperatures than Teflon-FEP electrets. A 1.1-μm-thick SiO2 layer, charged up to 150 V, yields a time constant of the charge decay in excess of 400 yr at ambient laboratory conditions
Keywords :
electrets; silicon compounds; surface conductivity; SiO2 layers; Teflon-FEP electrets; corona charged layers; electret material; lateral surface conductivity; surface modification; Chemical technology; Conducting materials; Electrets; Integrated circuit technology; Laboratories; Microphones; Polymers; Silicon compounds; Temperature; Thermal conductivity;
Conference_Titel :
Electrets, 1988. (ISE 6) Proceedings., 6th International Symposium on (IEEE Cat. No.88CH2593-2)
Conference_Location :
Oxford
DOI :
10.1109/ISE.1988.38543