Title :
Microwave FET amplifier stability analysis using Geometrically-Derived Stability Factors
Author :
Kassim, Syuhaimi ; Malek, Fareq
Author_Institution :
Sch. of Comput. & Commun. Eng., Univ. Malaysia Perlis (UniMAP), Kuala Perlis, Malaysia
Abstract :
In this paper, the concept of stability in the design of microwave amplifier is re-visited. With the help of EDA tools, the determination of the microwave amplifier stability is simplified through the derivation of Geometrically-Derive Source (μsource) and Load (μload) Stability Factors along with the Rollet Stability Factor (K-Factor). The effects of stabilization elements and layout parasitics i.e. ground inductance towards the amplifier´s stability and were discussed. The techniques are then demonstrated with the ATF-50189 E-pHEMT microwave amplifier typical parameters.
Keywords :
circuit stability; high electron mobility transistors; microwave field effect transistors; microwave parametric amplifiers; ATF-50189 E-pHEMT microwave amplifier; EDA tools; K-factor; geometrically-derived stability factors; ground inductance; layout parasitics; load stability factors; microwave FET amplifier stability analysis; rollet stability factor; stabilization element effect; Circuit stability; Equations; Mathematical model; Microwave FETs; Microwave amplifiers; Stability criteria; μload; μsource; Amplifier; K-Factor; Stability;
Conference_Titel :
Intelligent and Advanced Systems (ICIAS), 2010 International Conference on
Conference_Location :
Kuala Lumpur, Malaysia
Print_ISBN :
978-1-4244-6623-8
DOI :
10.1109/ICIAS.2010.5716171
