Silicon strip sensor simulations for the CMS phase-II tracker upgrade

The future high luminosity upgrade of the LHC will necessitate radiation harder sensors for the CMS silicon strip tracker. CMS has instigated a campaign to identify a possible technology baseline for upcoming sensor generations. In addition to measurements, simulations can give an important insight into specific sensor properties. In this report, the concept of TCAD simulations is briefly explained, followed by sensor simulation results before and after irradiation. These results are then compared to measurements. The focus lies on the inter-strip capacitance C_int of silicon strip sensors.