DocumentCode
2551288
Title
Modeling the undoped-body symmetric dual-gate MOSFET
Author
Malobabic, Slavica ; Ortiz-Conde, Adelmo ; Sánchez, Francisco J García
Author_Institution
Solid State Electron. Lab., Univ. Simon Bolivar, Caracas, Venezuela
Volume
1
fYear
2004
fDate
3-5 Nov. 2004
Firstpage
19
Lastpage
25
Abstract
A model of the undoped-body symmetric dual-gate MOSFET is presented based on the explicit analytic solution of its surface potential using the Lambert W function. The total channel carrier charge and drain current may be readily obtained from this solution. Results from the proposed solution are compared to exact results numerically calculated by iteration.
Keywords
MOSFET; semiconductor device models; Lambert W function; MOS compact modeling; channel carrier charge; drain current; intrinsic channel; semiconductor device modeling; undoped-body symmetric dual-gate MOSFET; CMOS technology; Circuit simulation; Computational efficiency; Equations; Laboratories; MOSFET circuits; Nanoscale devices; Physics; Silicon on insulator technology; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Devices, Circuits and Systems, 2004. Proceedings of the Fifth IEEE International Caracas Conference on
Print_ISBN
0-7803-8777-5
Type
conf
DOI
10.1109/ICCDCS.2004.1393346
Filename
1393346
Link To Document