Physics based analytical solution to undoped cylindrical surrounding-gate (SRG) MOSFETs

Author

He, Jin ; Chan, Mansun

Author_Institution

Dept. of EECS, Univ. of California at Berkeley, CA, USA

Volume

1

fYear

2004

fDate

3-5 Nov. 2004

Firstpage

26

Lastpage

28

Abstract

A physics based analytical solution to undoped cylindrical surrounding-gate (SRG) MOSFETs is derived in this paper by solving the Poisson-Boltzmann equation. The solution produces a closed form solution for the energy band bending. Based on the solution, the exact inversion charge density can be directly expressed as a function of the quasi-Fermi potential, gate voltage and device structure geometries. The accurate physics included in the analytical solution can be used to predict the performance of surrounding-gate MOSFETs under unconventional operation condition such as volume inversion effect due to silicon body diameter and structure dependent effective oxide thickness effects that are unique in a SRG MOSFET.

Keywords

Boltzmann equation; MOSFET; Poisson equation; semiconductor device models; Poisson-Boltzmann equation; compact modeling; device physics; device structure geometries; energy band bending; exact inversion charge density; gate voltage; oxide thickness effects; quasi-Fermi potential; undoped cylindrical surrounding-gate MOSFET; volume inversion effect; Boundary conditions; CMOS technology; Closed-form solution; Geometry; Helium; MOSFETs; Physics; Poisson equations; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 2004. Proceedings of the Fifth IEEE International Caracas Conference on

Print_ISBN

0-7803-8777-5

Type

conf

DOI

10.1109/ICCDCS.2004.1393347

Filename

1393347