Title :
Input power dividing of Doherty power amplifiers for handset applications
Author :
Kang, Daehyun ; Choi, Jinsung ; Yu, Daekyu ; Min, Kyoungjoon ; Jun, Myoungsu ; Kim, Dongsu ; Park, Jungmin ; Jin, Boshi ; Kim, Bumman
Author_Institution :
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
The input power drive of Doherty power amplifier (PA) is analyzed and a proper input dividing technique without a coupler is introduced. The efficiency and linearity are enhanced by the uneven power drive and proposed output matching circuits. The PA circuit is realized using a 2-mum InGaP/GaAs HBT process and combined using merged lumped-components for Doherty operation. For wireless broadband (WiBro) application, which has 9.54 dB crest factor and 8.75 MHz bandwidth, the PA has EVM of 3% and PAE of 40.2% at an output power of 26 dBm. This data represents that the PA has an excellent efficiency and linearity performance for handset applications, while eliminating the burden of a coupler.
Keywords :
III-V semiconductors; bipolar integrated circuits; broadband networks; gallium compounds; indium compounds; mobile handsets; power amplifiers; Doherty power amplifiers; InGaP-GaAs; bandwidth 8.75 MHz; handset application; heterojunction bipolar transistors; input power dividing; size 2 mum; wireless broadband; Bandwidth; Capacitance; Circuits; Gallium arsenide; Heterojunction bipolar transistors; Impedance matching; Linearity; Power amplifiers; Power generation; Telephone sets; Doherty; MMIC; efficient; handset; hetero-junction bipolar transistors (HBT); linear; power amplifier (PA);
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5165723
