DocumentCode :
2551429
Title :
A 144 GHz power amplifier MMIC with 11 dBm output power, 10 dB associated gain and 10 % power-added efficiency
Author :
Kallfass, I. ; Pahl, P. ; Massler, H. ; Leuther, A. ; Tessmann, A. ; Koch, S. ; Zwick, T.
Author_Institution :
Fraunhofer Inst. for Appl. Solid-State Phys. (IAF), Freiburg, Germany
fYear :
2009
fDate :
7-12 June 2009
Firstpage :
429
Lastpage :
432
Abstract :
A millimeter-wave monolithic integrated circuit power amplifier operating in the frequency range between 135 and 155 GHz is presented. The D-band power amplifier, realized in a 100 nm gate length metamorphic high electron mobility transistor technology, employs a three-stage design with four parallel transistors in the output stage. At 144 GHz and under 1-dB gain compression, the amplifier achieves an output power of more than 11 dBm with an associated gain of 10 dB and a high power-added efficiency of 10%. A comparison to state-of-the-art power amplifiers at high millimeter-wave frequencies is given.
Keywords :
HEMT integrated circuits; field effect MIMIC; millimetre wave power amplifiers; D-band power amplifier; four parallel transistors; frequency 135 GHz to 155 GHz; gain 1 dB; gain 10 dB; gain compression; high millimeter-wave frequencies; metamorphic high electron mobility transistor technology; millimeter-wave monolithic integrated circuit power amplifier; power amplifier MMIC; size 100 nm; three-stage design; Frequency; Gain; HEMTs; High power amplifiers; Integrated circuit technology; MIMICs; MMICs; MODFETs; Power amplifiers; Power generation; D-band; MMICs; mHEMT; millimeter-wave FET integrated circuits; millimeter-wave power amplification;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2009.5165725
Filename :
5165725
Link To Document :
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