DC-2 GHz low loss cryogenic InAs/AlSb HEMT switch

Author

Ma, Bob Yintat ; Bergman, Joshua ; Hacker, Jonathan B. ; Sullivan, Gerard ; Sailer, Alan ; Brar, B.

Author_Institution

Teledyne Sci. & Imaging, Thousand Oaks, CA, USA

fYear

2009

fDate

7-12 June 2009

Firstpage

449

Lastpage

452

Abstract

A DC-2 GHz InAs/AlSb HEMT MMIC single pole double throw (SPDT) switch designed for cryogenic temperature has been fabricated and characterized. This switch is suitable for low RF power applications that require low insertion loss and high isolation. At 2 GHz, the SPDT switch demonstrated a typical low insertion loss of 0.7 dB at 300 K and 0.3 dB at 90 K. The isolation is greater than 40 dB for both temperatures. These results demonstrate the outstanding potential of ABCS HEMT technology for low loss SPDT switches for cryogenic temperature.

Keywords

III-V semiconductors; aluminium compounds; cryogenic electronics; field effect transistor switches; indium compounds; microwave switches; ABCS HEMT technology; HEMT MMIC single pole double throw switch; InAs-AlSb; SPDT switch; cryogenic temperature; frequency 0 GHz to 2 GHz; insertion loss; low loss cryogenic HEMT switch; temperature 300 K; temperature 90 K; Communication switching; Cryogenics; Electron mobility; HEMTs; Insertion loss; Isolation technology; MMICs; Power semiconductor switches; Radio frequency; Temperature; ABCS; HEMT; InAs/AlSb HFET; MMIC; SPDT; antimonide-based compound semiconductor; single pole double pole; switch;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International

Conference_Location

Boston, MA

ISSN

0149-645X

Print_ISBN

978-1-4244-2803-8

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2009.5165730

Filename

5165730