Title :
Ku-band AlGaN/GaN-HEMT with over 30% of PAE
Author :
Takagi, Kazutaka ; Takatsuka, Shinji ; Kashiwabara, Yasushi ; Teramoto, Shinichiro ; Matsushita, Keiichi ; Sakurai, Hiroyuki ; Onodera, Ken ; Kawasaki, Hisao ; Takada, Yoshiharu ; Tsuda, Kunio
Author_Institution :
Microwave Solid-state Eng. Dept., Toshiba Corp., Kawasaki, Japan
Abstract :
AlGaN/GaN high electron mobility transistors (HEMTs) were improved for X-band and Ku-band applications. The power added efficiency (PAE) was achieved over 40% for X-band and over 30% for Ku-band. The developed devices combined two AlGaN/GaN HEMTs of 12 mm gate periphery and exhibited the output power of over 50 W. An AlGaN/GaN HEMT with four dies of 12 mm gate periphery was developed and exhibited the output power of over 120 W.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave power transistors; power HEMT; AlGaN-GaN; Ku-band AlGaN/GaN-HEMT; X-band applications; power added efficiency; Aluminum gallium nitride; Electrodes; Fabrication; Gallium nitride; HEMTs; Microwave devices; Power generation; Satellite communication; Silicon carbide; Voltage; AlGaN; GaN; HEMT; Ku-band; PAE; X-band;
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5165732
