DocumentCode
2551617
Title
Ku-band AlGaN/GaN-HEMT with over 30% of PAE
Author
Takagi, Kazutaka ; Takatsuka, Shinji ; Kashiwabara, Yasushi ; Teramoto, Shinichiro ; Matsushita, Keiichi ; Sakurai, Hiroyuki ; Onodera, Ken ; Kawasaki, Hisao ; Takada, Yoshiharu ; Tsuda, Kunio
Author_Institution
Microwave Solid-state Eng. Dept., Toshiba Corp., Kawasaki, Japan
fYear
2009
fDate
7-12 June 2009
Firstpage
457
Lastpage
460
Abstract
AlGaN/GaN high electron mobility transistors (HEMTs) were improved for X-band and Ku-band applications. The power added efficiency (PAE) was achieved over 40% for X-band and over 30% for Ku-band. The developed devices combined two AlGaN/GaN HEMTs of 12 mm gate periphery and exhibited the output power of over 50 W. An AlGaN/GaN HEMT with four dies of 12 mm gate periphery was developed and exhibited the output power of over 120 W.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; microwave power transistors; power HEMT; AlGaN-GaN; Ku-band AlGaN/GaN-HEMT; X-band applications; power added efficiency; Aluminum gallium nitride; Electrodes; Fabrication; Gallium nitride; HEMTs; Microwave devices; Power generation; Satellite communication; Silicon carbide; Voltage; AlGaN; GaN; HEMT; Ku-band; PAE; X-band;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location
Boston, MA
ISSN
0149-645X
Print_ISBN
978-1-4244-2803-8
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2009.5165732
Filename
5165732
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