DocumentCode :
2551700
Title :
Approximation of non-zero transistor ON resistance in class-E amplifiers
Author :
Ho, C.K. ; Wong, H. ; Ma, S.W.
Author_Institution :
Dept. of Electron. Eng., City Univ., Hong Kong, China
Volume :
1
fYear :
2004
fDate :
3-5 Nov. 2004
Firstpage :
90
Lastpage :
93
Abstract :
This work aims to develop accurate design formulae for class E power amplifier designs by considering the non-zero transistor "ON" resistance. With this consideration, the output characteristics of the amplifier can be approximated more accurately. Based on the derived analytical formulas, several class E amplifiers with operation frequency ranging from 100 kHz to 900 MHz were designed. The calculated characteristics of the amplifiers were validated with PSpice and Microwave Office simulations and experimental results. Good agreements were obtained.
Keywords :
HF amplifiers; SPICE; UHF power amplifiers; circuit simulation; 0.1 to 900 MHz; Microwave Office simulation; PSpice simulation; class E power amplifier; nonzero transistor ON resistance; output characteristics; Circuit analysis; Cities and towns; Design engineering; Frequency; Inductors; Microwave transistors; Power amplifiers; Power engineering and energy; Switches; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Devices, Circuits and Systems, 2004. Proceedings of the Fifth IEEE International Caracas Conference on
Print_ISBN :
0-7803-8777-5
Type :
conf
DOI :
10.1109/ICCDCS.2004.1393360
Filename :
1393360
Link To Document :
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