DocumentCode :
2551898
Title :
Modeling and characterization of electrostatically actuated CMOS-MEMS Resonator for magnetic field sensing
Author :
Ahmad, Farooq ; Dennis, J.O. ; Hamid, Nor Hisham
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. Teknol. Petronas, Tronoh, Malaysia
fYear :
2010
fDate :
15-17 June 2010
Firstpage :
1
Lastpage :
4
Abstract :
In this paper a new structure of electrostatically actuated clamped-clamped micro beam resonator is designed, modeled and simulated using aluminum as structural material to measure static to low frequency magnetic fields. The device is designed and simulated using CoventorWare simulation software to get mechanical properties using a static and dynamic displacement analysis and to get the optimum values of the beams parameters. The design is based on CMOS technology and surface micromachining. The resonant frequency increases with decreasing length, width and thickness of the micro beam resonator while the quality factor does not change with the change in the dimension of the resonator.
Keywords :
CMOS integrated circuits; aluminium; computerised instrumentation; magnetic field measurement; magnetic sensors; micromachining; micromechanical devices; micromechanical resonators; microsensors; Al; CoventorWare simulation software; dynamic displacement analysis; electrostatical actuated CMOS-MEMS resonator; electrostatical actuated clamped-clamped microbeam resonator; magnetic field sensing; quality factor; resonant frequency; structural material; surface micromachining; Electrodes; Force; Magnetic fields; Magnetic sensors; Micromechanical devices; Resonant frequency; CMOS technology; Electrostatic actuation; Lorentz force; MEMS Resonator; Magnetic sensor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Intelligent and Advanced Systems (ICIAS), 2010 International Conference on
Conference_Location :
Kuala Lumpur, Malaysia
Print_ISBN :
978-1-4244-6623-8
Type :
conf
DOI :
10.1109/ICIAS.2010.5716208
Filename :
5716208
Link To Document :
بازگشت