• DocumentCode
    2552377
  • Title

    Copper/titanium dioxide thick film and application for through-hole

  • Author

    Taniguchi, Yoshiaki ; Yoshihara, Toshio ; Tsukada, Takeshi

  • Author_Institution
    Copal Res. & Dev. Lab. Co. Ltd., Tokyo, Japan
  • fYear
    1988
  • fDate
    9-11 May 1988
  • Firstpage
    589
  • Lastpage
    595
  • Abstract
    The mechanism of strip-off and the characteristics of conductor materials are investigated. Roughness and other features that affect the adhesion are investigated by SEM and EPMA in order to elucidate why the conventional copper thick film will not form a reliable conductor on a laser-drilled through-hole. A copper paste to which a large amount of titanium dioxide powder is added is studied. Titanium dioxide reduces the shrinkage of the conductor in firing and makes the thermal expansion coefficient close to that of the substrate. Adhesion to the substrate, resistance, and conductor condition on the hole are evaluated. The microstructure and crystalline phase of the copper/titanium-dioxide fired thick film are analyzed to clarify the adhesion mechanism. It is found that compound forms between the titanium dioxide and the alumina, which increases the adhesion.<>
  • Keywords
    adhesion; copper; electron probe analysis; hybrid integrated circuits; integrated circuit technology; scanning electron microscope examination of materials; surface topography; thick films; titanium compounds; Al/sub 2/O/sub 3/; Cu-TiO/sub 2/ thick films; EPMA; SEM; adhesion; alumina; crystalline phase; electron probe microanalyser; fired thick film; hybrid integrated circuit; laser-drilled through-hole; microstructure; roughness; sheet resistance; strip-off mechanism; thermal expansion coefficient; Adhesives; Conducting materials; Conductive films; Conductors; Copper; Optical materials; Powders; Substrates; Thick films; Titanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Components Conference, 1988., Proceedings of the 38th
  • Conference_Location
    Los Angeles, CA, USA
  • Type

    conf

  • DOI
    10.1109/ECC.1988.12653
  • Filename
    12653