Dual channel WDM source with monolithically integrated electroabsorption modulators and Y-junction coupler by selective-area MOCVD

Author

Osowski, M.L. ; Lammert, R.M. ; Coleman, J.J.

Author_Institution

Mater. Res. Lab., Illinois Univ., Urbana, IL, USA

Volume

2

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

203

Abstract

In this talk, we present the design, fabrication and device results of a InGaAs-GaAs-AlGaAs strained QW dual-channel WDM source with monolithically integrated electroabsorption modulators and y-junction coupler by selective-area MOCVD. We show a schematic diagram of the dual-channel device.

Keywords

III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; integrated optoelectronics; optical couplers; optical fabrication; optical transmitters; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; wavelength division multiplexing; InGaAs-GaAs-AlGaAs; InGaAs-GaAs-AlGaAs strained QW dual-channel WDM source; Y-junction coupler; dual channel WDM source; monolithically integrated electroabsorption modulators; optical design; optical fabrication; schematic diagram; selective-area MOCVD; Chemical lasers; Laboratories; Laser tuning; MOCVD; Optical coupling; Optical device fabrication; Optical modulation; Optical waveguides; Quantum well lasers; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.571623

Filename

571623