High fill factor digital Silicon Photomultiplier structures in 130nm CMOS imaging technology

Author

Walker, Richard J. ; Webster, E.A.G. ; Jiahao Li ; Massari, Nicola ; Henderson, Robert K.

Author_Institution

CMOS Sensors & Syst. (CSS) Group, Univ. of Edinburgh, Edinburgh, UK

fYear

2012

fDate

Oct. 27 2012-Nov. 3 2012

Firstpage

1945

Lastpage

1948

Abstract

This paper discusses recent progress in the realization of fully digital Silicon Photomultipliers (SiPMs) in an advanced 130nm CMOS imaging process. A dedicated electrical/optical crosstalk characterization chip is reported, featuring a 16×16 SPAD SiPM with on-chip quench, SPAD enable/disable and readout circuitry positioned outside the SPAD array. Recent advances in well sharing are employed to deliver a fill factor of 38%. Integral crosstalk of <;2% was measured between a SPAD and its neighbors - the lowest yet reported for a high fill factor SiPM structure - measured using parallel readout channels allowing adjacent SPAD waveforms to be monitored in real time.

Keywords

CMOS image sensors; avalanche photodiodes; crosstalk; elemental semiconductors; photomultipliers; readout electronics; silicon; CMOS imaging process; SPAD SiPM; SPAD disable; SPAD enable; SPAD waveforms; Si; digital SiPM; electrical crosstalk characterization chip; high fill factor SiPM structure; integral crosstalk; on chip quench; optical crosstalk characterization chip; parallel readout channels; readout circuitry; silicon photomultipliers; size 130 nm; well sharing;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012 IEEE

Conference_Location

Anaheim, CA

ISSN

1082-3654

Print_ISBN

978-1-4673-2028-3

Type

conf

DOI

10.1109/NSSMIC.2012.6551449

Filename

6551449