Title :
A 76 GHz GaN-on-silicon power amplifier for automotive radar systems
Author :
Yoshida, S. ; Tanomura, M. ; Murase, Y. ; Yamanoguchi, K. ; Ota, K. ; Matsunaga, K. ; Shimawaki, H.
Author_Institution :
Nano Electron. Res. Labs., NEC Corp., Otsu, Japan
Abstract :
This paper describes the first demonstration of a 76 GHz gallium nitride (GaN) power amplifier (PA) on a silicon substrate. The PA microwave monolithic IC (MMIC) was fabricated by using AlGaN/GaN FET with a maximum oscillation frequency of 160 GHz and a breakdown voltage of over 50 V. For reducing transmission loss, we used a CPW line on the silicon substrate with low transmission loss of 0.5 dB/mm at 76 GHz. For precise design of the PA, a large signal model of the FET was developed. The developed CPW 3-stage PA exhibited an output of over 12 dBm with over 5 dB gain at 75-81 GHz.
Keywords :
MMIC power amplifiers; elemental semiconductors; field effect transistors; gallium compounds; millimetre wave power amplifiers; road vehicle radar; silicon; CPW line; FET; GaN; MMIC; automotive radar systems; field effect transistors; frequency 160 GHz; frequency 75 GHz to 81 GHz; gallium nitride-on-silicon power amplifier; microwave monolithic IC; Automotive engineering; Coplanar waveguides; FET integrated circuits; Gallium nitride; III-V semiconductor materials; MMICs; Power amplifiers; Propagation losses; Radar; Silicon; Gallium compounds; Millimeter wave power amplifiers; Millimeter wave radar; Silicon;
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5165784
