DocumentCode
2552865
Title
Low noise avalanche photodiodes
Author
David, J.P.R.
Author_Institution
University of Sheffield, USA
fYear
2008
fDate
25-27 Nov. 2008
Abstract
Avalanche photodiodes (APDs) are used in many applications when conventional unit y gain photodiodes cannot provide enough sensitivity and the extra amplification provided by the impact ionization process gives it an advantage. Unfortunately this amplification or gain of the incoming optical signal is always accompanied by some ´excess noise´ due to the stochastic nature of the ionization process and sets a limit to the maximum useful gain.
Keywords
amplification; avalanche photodiodes; electron impact ionisation; stochastic processes; ´excess noise´; III-V materials; amplification; avalanche photodiodes; electric field; electron ionization coefficient; hole ionization coefficient; impact ionization; low noise; optical signal; semiconductor material; stochasticity; Avalanche photodiodes; Electron optics; III-V semiconductor materials; Impact ionization; Noise reduction; Optical noise; Optical sensors; Signal processing; Stimulated emission; Stochastic resonance;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location
Johor Bahru
Print_ISBN
978-1-4244-3873-0
Electronic_ISBN
978-1-4244-2561-7
Type
conf
DOI
10.1109/SMELEC.2008.4770263
Filename
4770263
Link To Document