Title :
Design of 0.18um high voltage LDMOS for automotive application
Author :
Tee, Elizabeth Kho Ching ; Julai, Norhuzaimin ; Hai, Hu Yong ; Pal, Deb Kumar ; Hua, Tia Swee
Author_Institution :
X-FAB Sarawak Sdn. Bhd., Kuching
Abstract :
Designing of high voltage LDMOS with a reduced surface field (RESURF) structure have been investigated to achieve the optimum figure of merit, maximum breakdown voltage accompanied with low on resistance. The drift region profile and device geometry plays important role to achieve target breakdown voltage of 80 V. The electrical behaviors of the designed high voltage LDMOS for both on state and off state conditions are discussed analytically in this paper.
Keywords :
MOSFET; automotive electronics; power semiconductor devices; automotive application; device geometry; drift region profile; high voltage LDMOS; reduced surface field; size 0.18 mum; target breakdown voltage; voltage 80 V; Automotive applications; Automotive engineering; Batteries; Breakdown voltage; Immune system; Low voltage; MOSFETs; Medical simulation; Surface resistance; Threshold voltage; Automotive; high voltage LDMOS; simulation;
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
DOI :
10.1109/SMELEC.2008.4770266
