Title :
A W-band low-noise amplifier with 22K noise temperature
Author :
Bryerton, Eric W. ; Mei, Xiaobing ; Kim, Young-Min ; Deal, William ; Yoshida, Wayne ; Lange, Mike ; Uyeda, Jansen ; Morgan, Matthew ; Lai, Richard
Author_Institution :
Nat. Radio Astron. Obs., Charlottesville, VA, USA
Abstract :
A W-band MMIC low-noise amplifier (LNA) was designed and fabricated using NGST´s 35 nm InP HEMT process. It was packaged in a WR-12 module and tested at 297K and 17.5K ambient temperatures. At room temperature, the WR-12 LNA module has 26-30 dB gain from 70 to 92 GHz and less than 300K noise temperature from 65-86 GHz. At 17.5K ambient temperature, the WR-12 LNA module has a minimum noise temperature of 22K at 85 GHz and less than 40K noise temperature from 70-96 GHz (below 30K noise temperature from 78-95 GHz). Gain at 17.5K is 27-31 dB from 70 to 94 GHz. Power dissipation cold is 2.1 mW. Analysis is also included to investigate the observed frequency shift with ambient temperature. It is believed that these are the lowest noise temperature measured for a packaged W-band amplifier at both room and cryogenic temperatures.
Keywords :
HEMT integrated circuits; MMIC amplifiers; indium compounds; low noise amplifiers; InP HEMT process; LNA module; NGST; W-band MMIC low-noise amplifier; W-band low-noise amplifier; ambient temperatures; frequency 65 GHz to 86 GHz; frequency 70 GHz to 92 GHz; frequency 70 GHz to 94 GHz; frequency 70 GHz to 96 GHz; frequency 85 GHz; gain 26 dB to 30 dB; gain 27 dB to 31 dB; noise temperature; observed frequency shift; power 2.1 mW; power dissipation cold; temperature 17.5 K; temperature 22 K; temperature 297 K; Frequency; Gain; HEMTs; Indium phosphide; Low-noise amplifiers; MMICs; Packaging; Power dissipation; Temperature measurement; Testing;
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5165788
