Title :
CMOS MAPS in a homogeneous 3D process for charged particle tracking
Author :
Manazza, Alessia ; Gaioni, L. ; Manghisoni, Massimo ; Ratti, Lodovico ; Re, V. ; Traversi, Gianluca ; Bettarini, S. ; Morsani, Fabio ; Rizzo, Gianluca
Author_Institution :
Dipt. di Ing. Ind. e dell´Inf., Univ. di Pavia, Pavia, Italy
fDate :
Oct. 27 2012-Nov. 3 2012
Abstract :
This work is concerned with the characterization of deep n-well (DNW) CMOS monolithic active pixel sensors (MAPS) fabricated in a 130 nm homogeneous vertically integrated technology. An evaluation of the 3D MAPS device performance, designed for a possible future upgrade of the SuperB-Layer0, is provided through a complete characterization of the prototypes, including tests with infrared (IR) laser, 55Fe and 90Sr sources. The radiation hardness study of the technology will also be presented together with its impact on 3D DNW MAPS performance.
Keywords :
CMOS image sensors; monolithic integrated circuits; radiation hardening (electronics); readout electronics; 3D DNW MAPS performance; 3D MAPS device performance; 55Fe source; 90Sr source; CMOS MAPS; SuperB-LayerO; charged particle tracking; deep n-well CMOS monolithic active pixel sensors; homogeneous 3D process; homogeneous vertically integrated technology; infrared laser; radiation hardness; Analog front-end; CMOS; DNW MAPS; vertial integration processes;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4673-2028-3
DOI :
10.1109/NSSMIC.2012.6551472
