HBT technologies and circuits for TDM and WDM optical networks

Author

Wang, K.C. ; Buccue, S. ; Chang, Charles ; Pedrotti, Ken ; Price, Alistair ; Runge, Klaus ; Wu, Dolly ; Yu, Ruai ; Asbeck, Peter M. ; Metzger, Andre

Author_Institution

Rockwell Inst. Sci. Center, Thousand Oaks, CA, USA

Volume

2

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

209

Abstract

Heterojunction bipolar transistor (HBT) technologies have enabled many >10 Gb/s circuits for lightwave communications. The most common HBTs are based on AlGaAs-GaAs material system. Typically, they are emitter-up Npn transistors. A schematic cross section of a typical HBT and a Schottky diode is illustrated.

Keywords

III-V semiconductors; Schottky diodes; aluminium compounds; bipolar integrated circuits; gallium arsenide; integrated optoelectronics; optical communication equipment; time division multiplexing; wavelength division multiplexing; 10 Gbit/s; AlGaAs-GaAs; AlGaAs-GaAs material system; HBT technologies; Schottky diode; TDM; WDM optical networks; emitter-up Npn transistors; heterojunction bipolar transistor; lightwave communications; schematic cross section; Circuits; Gallium arsenide; Heterojunction bipolar transistors; High speed optical techniques; Optical arrays; Optical fiber networks; Repeaters; Time division multiplexing; WDM networks; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.571626

Filename

571626