A comparative study on analog/RF performance of ultra-thin body (UTB) SOI and double gate MOSFETs

In this paper, a comprehensive comparison of analog/RF performance of ultra-thin-body (UTB) SOI and double-gate (DG) devices was investigated through simulation. Analog/RF figures of merit, which was being estimated including intrinsic gain, g_m/g_ds, g_m/I_ds values, transition/cut-off frequency, f_T, maximum oscillation frequency, f_MAX, and minimum noise figure, NF_min. Due to the unique structure of double-gate (DG) devices, it can exhibit excellent analog/RF behaviors. Higher g_m/I_ds ratio and intrinsic gain, g_m/g_ds can be received by comparing with the ultra-thin-body (UTB) SOI. Superior f_T and f_MAX, which are due to higher transconductance, g_m and lower output conductance, g_ds, can be observed in the double-gate devices. In addition, better noise and gains performance can be achieved resulting from improved g_m. Thus, the double-gate devices can be considered as better candidates for analog/RF applications.