Abstract :
In this paper, a comprehensive comparison of analog/RF performance of ultra-thin-body (UTB) SOI and double-gate (DG) devices was investigated through simulation. Analog/RF figures of merit, which was being estimated including intrinsic gain, gm/gds, gm/Ids values, transition/cut-off frequency, fT, maximum oscillation frequency, fMAX, and minimum noise figure, NFmin. Due to the unique structure of double-gate (DG) devices, it can exhibit excellent analog/RF behaviors. Higher gm/Ids ratio and intrinsic gain, gm/gds can be received by comparing with the ultra-thin-body (UTB) SOI. Superior fT and fMAX, which are due to higher transconductance, gm and lower output conductance, gds, can be observed in the double-gate devices. In addition, better noise and gains performance can be achieved resulting from improved gm. Thus, the double-gate devices can be considered as better candidates for analog/RF applications.
Keywords :
MOSFET; radio applications; silicon-on-insulator; MOSFET; RF performance; analog performance; double-gate devices; maximum oscillation frequency; ultrathin body SOI; Cutoff frequency; Doping; Frequency estimation; Intrusion detection; MOSFETs; Noise figure; Numerical simulation; Poisson equations; Radio frequency; Voltage;
