Title :
Electrothermal large-signal model of III–V FETs accounting for frequency dispersion and charge conservation
Author :
Liu, Lin-Sheng ; Ma, Jian-Guo ; Ng, Geok-Ing
Author_Institution :
Sch. of EE, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A comprehensive electrothermal model of III-V FETs is presented which accounts for gate/drain trapping effects and charge conservation. Two improved drain current models with and without transconductance compression mechanism, respectively, along with a consistent charge-conservative gate charge model have been developed. The channel current modeling parameters are extracted from DC and Pulsed I-V measurements at different ambient temperatures and quiescent biasing points. And the validity of the complete large-signal model is demonstrated by comparing the predicted I-V, C-V as well as power characteristics with the measured ones by employing GaAs pHEMTs.
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; power HEMT; GaAs; GaAs pHEMTs; III-V FETs; channel current modeling parameters; charge conservation; charge-conservative gate charge model; drain current models; electrothermal large-signal model; frequency dispersion; gate/drain trapping effects; quiescent biasing points; transconductance compression mechanism; Capacitance-voltage characteristics; Current measurement; Electrothermal effects; FETs; Frequency; III-V semiconductor materials; Predictive models; Pulse measurements; Temperature; Transconductance; FET; HEMT; nonlinear model; parameter extraction;
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5165805
