• DocumentCode
    2553338
  • Title

    Design of I/Q demodulator for W-CDMA

  • Author

    Marzuki, A. ; Shakaff, Ali Yeon Md ; Sauli, Zaliman

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Univ. Sains Malaysia, Nibong Tebal
  • fYear
    2008
  • fDate
    25-27 Nov. 2008
  • Firstpage
    99
  • Lastpage
    102
  • Abstract
    The design of an Inphase-Quadrature (I/Q) demodulator with low current consumption is described. The I/Q demodulator was designed for wideband code division multiple access (W-CDMA) communication system. SiGe 0.35 mum BiCMOS technology with fT = 45 GHz, fmax = 60 GHz and noise figure = 0.8 dB at 2 GHz was used for the design. A top-down and bottom-up approach was used in designing the I/Q demodulator. CMOS devices were primarily used in the biasing circuits for power consumption reduction while SiGe bipolar devices were used in signal path circuits. The design contained 2 mixers, a local oscillator (LO) divider, negative resistance circuit, buffer amplifiers and bias/control circuits. The I/Q demodulator circuits were then layout and had gone through the post-layout simulation to check performance with the parasitic elements which were introduced from the layout. A design prototype was measured and was found to be agreed with the simulation results. The prototype worked in the region of 190 MHz input frequency and 0-35 MHz output frequency. The prototype had also met the specifications for the W-CDMA hand phone receiver. It achieves EVM of 2.9%. It is also achieved gain ripple of 0.12 dB, gain mismatch of 0.1 dB and phase mismatch of 1.25deg. Finally, the design which is consisted of mixers, frequency dividers, VCO buffer amplifiers and bias/control circuits consumes 4 mA with 3 V power supply.
  • Keywords
    BiCMOS integrated circuits; CMOS integrated circuits; MIMIC; code division multiple access; demodulators; BiCMOS technology; CMOS devices; I/Q demodulator circuit design; SiGe; VCO buffer amplifiers; W-CDMA hand phone receiver; bias-control circuits; biasing circuits; bipolar devices; bottom-up approach; buffer amplifiers; current 4 mA; frequency 0 MHz to 35 MHz; frequency 190 MHz; frequency 2 GHz; frequency 45 GHz; frequency 60 GHz; frequency dividers; gain 0.1 dB; gain 0.12 dB; gain mismatch; inphase-quadrature demodulator; local oscillator divider; low current consumption; mixers; negative resistance circuit; noise figure 0.8 dB; phase mismatch; power consumption reduction; signal path circuits; size 0.35 mum; top-down approach; voltage 3 V; wideband code division multiple access communication system; BiCMOS integrated circuits; CMOS technology; Circuit simulation; Demodulation; Frequency; Germanium silicon alloys; Multiaccess communication; Prototypes; Silicon germanium; Wideband; Demodulator; Integrated Circuit; W-CDMA;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
  • Conference_Location
    Johor Bahru
  • Print_ISBN
    978-1-4244-3873-0
  • Electronic_ISBN
    978-1-4244-2561-7
  • Type

    conf

  • DOI
    10.1109/SMELEC.2008.4770285
  • Filename
    4770285