Title :
Broadband GaN switch mode class E power amplifier for UHF applications
Author :
Al Tanany, Ahmed ; Sayed, Ahmed ; Boeck, Georg
Author_Institution :
Microwave Lab., Berlin Univ. of Technol., Berlin, Germany
Abstract :
In this work a broad-band class E power amplifier (PA) is designed, manufactured and measured. 400 MHz bandwidth with a center frequency of 800 MHz was realized using a GaN HEMT device. A novel and easy circuit topology is proposed for broad-band bandpass filter with integrated output matching network. Different filter types are discussed, suitable topology is chosen and design equations are shown. A maximum drain efficiency of 87.8 % (PAE = 80.6 %) is observed. Maximum output power of 49 W is measured with 16.3 dB power gain at the 1 dB compression point.
Keywords :
UHF amplifiers; band-pass filters; gallium compounds; high electron mobility transistors; network topology; power amplifiers; wideband amplifiers; GaN; GaN HEMT device; UHF applications; broad-band bandpass filter; broadband GaN switch mode class E power amplifier; circuit topology; frequency 400 MHz; frequency 800 MHz; gain 1 dB; integrated output matching network; power 49 W; Band pass filters; Broadband amplifiers; Circuit topology; Frequency measurement; Gallium nitride; Integrated circuit measurements; Manufacturing; Power amplifiers; Power measurement; Switches; Bandpass filter; Broadband amplifier; Class E; GaN; High-efficiency; UHF;
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5165808
